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DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs PMR cellular telephones etc

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs PMR cellular telephones etc

liane-varnes
10 Slides

with a minimum of external components With the ad...

University of Virginia

University of Virginia

tawny-fly
35 Slides

High Electron Mobility Transistor (HEMT) devices i...

High Electron Mobility Transistors

High Electron Mobility Transistors

luanne-stotts
0 Slides

Presented by: ...

High Electron Mobility Transistor

High Electron Mobility Transistor

test
0 Slides

Chad . Auginash. April 20, 2015. Abstract. High e...

umericl nlysis of rpid solidifiction of

umericl nlysis of rpid solidifiction of

garcia
7 Slides

82 | .i4i °lloy: )nfluence of bound°ry condition...

GaN Systems

GaN Systems

caitlin
24 Slides

1Design considerations of Paralleled GaN HEMT-base...

High electron mobility transistors (HEMT)

High electron mobility transistors (HEMT)

LuckyLadybug
13 Slides

Amir . Abdurahim. EE4611. 04/11/2016. Introduction...

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