PDF-target substrate SiO SiH o CVD is used to form SiO layers that are much thicker in

Author : pamella-moone | Published Date : 2014-12-18

can be deposited from reacting silane and oxyge n in LPCVD reactor at 300 to 500C where can also be LPCVD deposited by decomposing dichlorosilane HCl SiO SiCl 900

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target substrate SiO SiH o CVD is used to form SiO layers that are much thicker in: Transcript

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