PDF-Investigation of Efficiency Droop for InGaN-based LEDs with Carrier L

Author : karlyn-bohler | Published Date : 2016-03-18

CS MANTECH Conference April 23rd 26th 2012 Boston Massachusetts USA 100nmthick pGaN layer using CpMg as the ptype dopant were deposited LEDs having dimensions of

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Investigation of Efficiency Droop for InGaN-based LEDs with Carrier L: Transcript

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