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PDF-Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization PDF document

Speci731c contact resistance as low as 57 10 cm was obtained from the Pd 30 Ni 70 contact annealed at 500 C under an oxidizing ambient NiO that formed at the surface

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Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization: Transcript

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