PDF-Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization
Author : faustina-dinatale | Published Date : 2015-01-15
Speci731c contact resistance as low as 57 10 cm was obtained from the Pd 30 Ni 70 contact annealed at 500 C under an oxidizing ambient NiO that formed at the surface
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Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization: Transcript
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