PPT-Formation of Sub-10 nm width InGaAs finFETs

Author : conchita-marotz | Published Date : 2016-07-01

of 200 nm Height by Atomic Layer Epitaxy D CohenElias 1 JJM Law 1 HW Chiang 1 A Sivananthan 1 C Zhang 1 B J Thibeault 1 WJ Mitchell 1 S Lee 1 AD Carter

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Formation of Sub-10 nm width InGaAs finFETs: Transcript

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