PDF-IEEE TRANSACTIONS ON ELECTRON DEVICES VOL
57 NO 4 APRIL 2010 913 Investigation of Random Telegraph Noise in GateInduced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETs JuWan Lee Byoung
Download Presentation
"IEEE TRANSACTIONS ON ELECTRON DEVICES VOL" is the property of its rightful owner. Permission is granted to download and print materials on this website for personal, non-commercial use only, provided you retain all copyright notices. By downloading content from our website, you accept the terms of this agreement.
Presentation Transcript
Transcript not available.