PDF-IEEE TRANSACTIONS ON ELECTRON DEVICES VOL

Author : alida-meadow | Published Date : 2015-01-15

57 NO 4 APRIL 2010 913 Investigation of Random Telegraph Noise in GateInduced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETs JuWan Lee Byoung

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IEEE TRANSACTIONS ON ELECTRON DEVICES VOL: Transcript

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